Photoresponse of porous silicon structures to infrared radiation

Samuolienė, Neringa; Širmulis, Edmundas; Stupakova, Jolanta; Gradauskas, Jonas; Zagadskij, Viktor; Šatkovskis, Eugenijus

Use this URL to cite this publication: https://hdl.handle.net/20.500.14911/129517

Photoresponse of porous silicon structures to infrared radiation

Details

Publication Type (CRIS)

Straipsnis Web of Science duomenų bazėje / Article in Web of Science database (S1a)

Publication Type (eLABa)

Straipsnis Web of Science DB / Web of Science DB article (S1)

Author(s)

Author	Affiliation
Samuolienė, Neringa	Fizikos katedra / Department of Physics (1020)
Širmulis, Edmundas	Valstybinis mokslinių tyrimų institutas Fizinių ir technologijos mokslų centras
Stupakova, Jolanta	Fizikos katedra / Department of Physics (1020)
Gradauskas, Jonas	Fizikos katedra / Department of Physics (1020)
Zagadskij, Viktor	Fizikos katedra / Department of Physics (1020)
Šatkovskis, Eugenijus	Fizikos katedra / Department of Physics (1020)

Title

Photoresponse of porous silicon structures to infrared radiation

[en]

N. Samuoliene, E. Širmulis, J. Stupakova, J. Gradauskas, V. Zagadskij, E. Satkovskis

Is part of

Acta Physica Polonica A. 14th International Symposium on Ultrafast Phenomena in Semiconductors. Vilnius, Lithuania, August 23-25, 2010

Published In

Year	Volume	Issue	Start Page	End Page
2011	119	2	137	139

Publisher

Warszawa : Polish Academy of Sciences

Publisher (trusted)

Polish Academy of Sciences

Referenced in Database(s)(DBs)

Conference Proceedings Citation Index - Science (Web of Science)

Science Citation Index Expanded (Web of Science)

Extent

p. 137-139

URI

URI	Access Rights
https://hdl.handle.net/20.500.14911/129517
Straipsnis	Viso teksto dokumentas (atviroji prieiga) / Full Text Document (Open Access)

Cited references

Science / Art Area

Gamtos mokslai / Natural Sciences (N)

Field of Science / Art

Fizika / Physics (N002)

Keywords (lt)

Keywords (en)

Abstract (en)

Photoresponse of silicon samples containing porous structures have been studied under the action of CO2 laser radiation. The signal shape and its behavior under the applied bias voltage revealed the existence of two heterojunctions on the border of porous-crystalline silicon and on the border between the porous layers of different porosity. The photosignal is recognized to be composed of hot hole photoemfs induced across the heterojunctions.