Use this URL to cite this publication: https://hdl.handle.net/20.500.14911/114054
Investigation of hot carrier phenomenon in GaAs p-n junction
Publication Type (CRIS)
Konferencijų tezės nerecenzuojamame leidinyje / Conference theses in non-peer-reviewed publication (T2)
Publication Type (eLABa)
Konferencijos pranešimo tezės / Conference presentation abstract (T2)
VILNIUS TECH Research Priorities and Topics
Atsinaujinanti energija / Renewable energy (AE0404)
Lithuanian Intelligent Specialization
Energetika ir tvari aplinka / Energy and a sustainable environment (L102)
Title
Investigation of hot carrier phenomenon in GaAs p-n junction
Oleksandr Masalskyi, Jonas Gradauskas
Is part of
Сonference of young scientists on semiconductor physics ”Lashkaryov’s readings – 2021”, Kyiv, Ukraine, 5-7 April 2021 : abstract books
Published In
| Year |
|---|
2021 |
Publisher
V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine, 2021
Extent
p. 76
URI
Cited references
2
Science / Art Area
Technologijos mokslai / Technological sciences (T)
Field of Science / Art
Elektros ir elektronikos inžinerija / Electrical and electronic engineering (T001)
Fizika / Physics (N002)
Resource Type (COAR)
TextConference outputConference proceedingsConference paper
Language
Anglų / English (en)
Country
Ukraina / Ukraine (UA)
Accounting Year
2022
File(s)
Owning collection
ISBN (of the container)
9789660296039
eLABa ID
146742229
Access Rights
Atviroji prieiga / Open Access