Use this URL to cite this publication: https://hdl.handle.net/20.500.14911/114255
Detecting microwave radiation on metal–porous silicon contacts
Publication Type (CRIS)
Straipsnis Web of Science duomenų bazėje / Article in Web of Science database (S1a)
Publication Type (eLABa)
Straipsnis Web of Science DB / Web of Science DB article (S1)
VILNIUS TECH Research Priorities and Topics
Fizinių, technologinių ir ekonominių procesų matematiniai modeliai ir metodai / Mathematical models and methods of physical, technological and economic processes (FM03)
Lithuanian Intelligent Specialization
Nauji gamybos procesai, medžiagos ir technologijos / New production processes, materials and technologies (L104)
Author(s)
| Author | Affiliation | |
|---|---|---|
Valstybinis mokslinių tyrimų institutas Fizinių ir technologijos mokslų centras | ||
Valstybinis mokslinių tyrimų institutas Fizinių ir technologijos mokslų centras | ||
Title
Detecting microwave radiation on metal–porous silicon contacts
J. Gradauskas, J. Stupakova, A. Sužiedėlis, N. Samuolienė
Is part of
Technical physics letters : an English translation of the journal ''Pis'ma w Zhurnal Tekhnicheskoi Fiziki''
Published In
| Year | Volume | Issue | Start Page | End Page |
|---|---|---|---|---|
2015 | 41 | 12 | 1202 | 1204 |
Publisher
New York : Springer
Publisher (trusted)
Referenced in Database(s)(DBs)
Extent
p. 1202-1204
URI
| URI | Access Rights |
|---|---|
| https://hdl.handle.net/20.500.14911/114255 | |
| Straipsnis | Viso teksto dokumentas (atviroji prieiga) / Full Text Document (Open Access) |
Cited references
14
Science / Art Area
Technologijos mokslai / Technological sciences (T)
Field of Science / Art
Elektros ir elektronikos inžinerija / Electrical and electronic engineering (T001)
Medžiagų inžinerija / Materials engineering (T008)
Fizika / Physics (N002)
Abstract (en)
We have studied the rise of electromotive force (emf) across ohmic and nonohmic metal–porous silicon contacts under the action of 10-GHz microwave radiation. It is established that emfs of opposite polarities with different growth (and decay) rates are generated across the contacts of different types. The emf growth across the potential barriers of contacts is explained using a model of the microwave-induced heating of charge carriers. It is shown that the use of a porous semiconductor layer is a promising way to increase the voltage–power responsivity of microwave detectors and eliminate the “point contact” effects.
Resource Type (COAR)
TextJournalJournal articleResearch article
Language
Anglų / English (en)
Country
Jungtinės Amerikos Valstijos / United States of America (US)
Owning collection
ISSN (of the container)
1063-7850
1090-6533
eLABa ID
15213430