Measurement of charge density and mobility in semiconductors in the strong magnetic field

Barauskas, Saulius; Jankauskas, Zigmantas; Kvedaras, Vygaudas; Souslov, A.

Use this url to cite publication: https://hdl.handle.net/20.500.14911/144205

Measurement of charge density and mobility in semiconductors in the strong magnetic field

Details

Publication Type (CRIS)

Straipsnis konferencijos medžiagoje Web of Science duomenų bazėje / Article in conference proceedings in Web of Science database (P1a1)

Publication Type (eLABa)

Straipsnis konferencijos darbų leidinyje Web of Science DB / Article in conference proceedings Web of Science DB (P1a)

Author(s)

Author	Affiliation
Barauskas, Saulius	Elektrotechnikos laboratorija / Laboratory of Electrical Engineering (055802)
Jankauskas, Zigmantas	Elektros inžinerijos katedra / Department of Electrical Engineering (0558)
Kvedaras, Vygaudas	Elektros inžinerijos katedra / Department of Electrical Engineering (0558)
Souslov, A.	National High Magnetic Field Laboratory

Title

Measurement of charge density and mobility in semiconductors in the strong magnetic field

[en]

S. Barauskas, Z. Jankauskas, V. Kvedaras, A. Souslov

Is part of

Measurement 2007. The 6th International Conference on Measurement. Smolenice, Slovakia, May 20-24, 2007 : proceedings / Slovak Academy of Sciences

Published In

Year	Start Page	End Page
2007	176	180

Publisher

Bratislava : Institute of Measurement Science, 2007

Referenced in Database(s)(DBs)

ISI Proceedings

Extent

p. 176-180

URI

URI
https://hdl.handle.net/20.500.14911/144205

Cited references

Science / Art Area

Technologijos mokslai / Technological sciences (T)

Field of Science / Art

Elektros ir elektronikos inžinerija / Electrical and electronic engineering (T001)

Keywords (en)

Abstract (en)

In the semiconductors when the strong constant magnetic field H is applied the nondissipative Hall currents appear and helicon magnetoplasmic waves may be excited. The semiconductor sample becomes partially transparent under these conditions. In the case of resonance the transparency coefficient has maximum or minimum depending of resonance number. For fixed values of H and excitation frequency ω the charge density and mobility may be found. Measurements were conducted in the range of radio frequencies 10-2000 MHz, and magnetic fields 0-32 Tesla for n-InSb and n-Ge.