Use this URL to cite this publication: https://hdl.handle.net/20.500.14911/143740
Numerical simulation of the conductivity relaxation in the high resistivity Semiconductor
Publication Type (CRIS)
Straipsnis Web of Science ir Scopus duomenų bazėje / Article in Web of Science and Scopus database (S1)
Publication Type (eLABa)
Straipsnis Web of Science DB / Web of Science DB article (S1)
Author(s)
| Author | Affiliation |
|---|---|
Pincevičius, Albertas | Generolo Jono Žemaičio Lietuvos karo akademija |
Title
Numerical simulation of the conductivity relaxation in the high resistivity Semiconductor
A. Pincevičius, M. Meilūnas, N. Tumanova
Is part of
Mathematical modelling and analysis: the Baltic journal on mathematical applications, numerical analysis and differential equations
Published In
| Year | Volume | Issue | Start Page | End Page |
|---|---|---|---|---|
2007 | 12 | 3 | 379 | 388 |
Publisher
Vilnius : Technika
Publisher (trusted)
Technika
Referenced in Database(s)(DBs)
Extent
p. 379-388
Cited references
7
Science / Art Area
Gamtos mokslai / Natural Sciences (N)
Field of Science / Art
Matematika / Mathematics (N001)
Fizika / Physics (N002)
Abstract (en)
A theoretical model describing the relaxation of charge carriers in semi- conductors of high resistance under the influence of the laser pulses is presented. It is demonstrated that parameters of the trapping states relevant to the processes of the conductivity relaxation can be defined by fitting the experimental data. Time evolution of the conductivity of the GaAs bulk semiconductor under the influence of nanosecond and picosecond laser pulses is considered. Effect of two laser pulses, when the first one results in population of the trapping state and the second one induces its depopulation, is also considered.
Resource Type (COAR)
TextJournalJournal articleResearch article
Language
Anglų / English (en)
Country
Lietuva / Lithuania (LT)
Owning collection
ISSN (of the container)
1392-6292
WOS
000255053600009
eLABa ID
3786592