The interrelation between the injection level and voltage of the p-n junction

Abstract

The new equations of minority carrier hole and electron injection levels kp and kn and the voltage drop across the p-n junction depletion region Ud. At low Ud, i.e. at low-lewel injection the obtained equations coincide with exponential equations of injection level. However, at high-level injection when Ud becomes high and is close to the potentoal barrier of junction, the derived equations give increased steepness of kp and kn dependence on Ud as compared with the exponential law. The dependences of kp and kn of concrete silicon p-n junctions with different impurity concentrations have been analyzed using derived equations of injection level.