Use this URL to cite this publication: https://hdl.handle.net/20.500.14911/140836
Numerical analysis of nonlinear model of excited carrier decay
Publication Type (CRIS)
Straipsnis Web of Science ir Scopus duomenų bazėje / Article in Web of Science and Scopus database (S1)
Publication Type (eLABa)
Straipsnis Web of Science DB / Web of Science DB article (S1)
Author(s)
| Author | Affiliation |
|---|---|
Title
Numerical analysis of nonlinear model of excited carrier decay
Natalija Tumanova, Raimondas Čiegis, Mečislavas Meilūnas
Is part of
Central European Journal of Mathematics
Published In
| Year | Volume | Start Page | End Page |
|---|---|---|---|
2013 | 11 | 1140 | 1152 |
Publisher
Warsaw : Versita
Publisher (trusted)
Referenced in Database(s)(DBs)
Extent
p. 1140-1152
URI
| URI | Access Rights |
|---|---|
| https://hdl.handle.net/20.500.14911/140836 | |
| Straipsnis | Viso teksto dokumentas (atviroji prieiga) / Full Text Document (Open Access) |
Cited references
31
Science / Art Area
Gamtos mokslai / Natural Sciences (N)
Field of Science / Art
Matematika / Mathematics (N001)
Abstract (en)
This paper presents a mathematical model for photo-excited carrier decay in a semiconductor. Due to the carrier trapping states and recombination centers in the bandgap, the carrier decay process is defined by the system of nonlinear differential equations. The system of nonlinear ordinary differential equations is approximated by linearized backward Euler scheme. Some a priori estimates of the discrete solution are obtained and the convergence of the linearized backward Euler method is proved. The identifiability analysis of the parameters of deep centers is performed and the fitting of the model to experimental data is done by using the genetic optimization algorithm. Results of numerical experiments are presented.
Resource Type (COAR)
TextJournalJournal articleResearch article
Language
Anglų / English (en)
Country
Lenkija / Poland (PL)
Owning collection
ISSN (of the container)
1895-1074
eLABa ID
4016910