Detection of 9.5 μm CO2 laser pulses in indium doped PbTe p-n junction

Gradauskas, Jonas; Dzundza, Bohdan; Chernyak, Leonid; Dashevsky, Zinovy

doi:10.1016/j.physb.2021.412855

Use this URL to cite this publication: https://hdl.handle.net/20.500.14911/151531

Detection of 9.5 μm CO2 laser pulses in indium doped PbTe p-n junction

Details

Publication Type (CRIS)

Straipsnis Web of Science ir Scopus duomenų bazėje / Article in Web of Science and Scopus database (S1)

Publication Type (eLABa)

Straipsnis Web of Science DB / Web of Science DB article (S1)

VILNIUS TECH Research Priorities and Topics

Atsinaujinanti energija / Renewable energy (AE0404)

Lithuanian Intelligent Specialization

Nauji gamybos procesai, medžiagos ir technologijos / New production processes, materials and technologies (L104)

Author(s)

Author	Affiliation
Gradauskas, Jonas	Fizikos katedra / Department of Physics (1020)
Dzundza, Bohdan	Vasyl Stefanyk Precarpathian National University
Chernyak, Leonid	University of Central Florida
Dashevsky, Zinovy	Ben-Gurion University of the Negev

Title

Detection of 9.5 μm CO2 laser pulses in indium doped PbTe p-n junction

[en]

Jonas Gradauskas, Bohdan Dzundza, Leonid Chernyak, Zinovy Dashevsky

Is part of

Physica B: Physics of Condensed Matter

Published In

Year	Volume	Issue	Start Page	End Page
2021	607	412855	1	5

Publisher

Amsterdam : Elsevier

Publisher (trusted)

Elsevier

Referenced in Database(s)(DBs)

Science Citation Index Expanded (Web of Science)

Extent

p. 1-5

URI

URI	Access Rights
https://hdl.handle.net/20.500.14911/151531
https://doi.org/10.1016/j.physb.2021.412855	Viso teksto dokumentas (prieiga prenumeratoriams) / Full Text Document (Access for Subscribers)
https://talpykla.elaba.lt/elaba-fedora/objects/elaba:83263443/datastreams/MAIN/content

DOI

10.1016/j.physb.2021.412855

Cited references

Science / Art Area

Gamtos mokslai / Natural Sciences (N)

Field of Science / Art

Fizika / Physics (N002)

Elektros ir elektronikos inžinerija / Electrical and electronic engineering (T001)

Keywords (en)

Abstract (en)

A unique feature of the PbTe semiconductor is the growth of its forbidden energy gap with increasing temperature. This allows saving diode-typical characteristics at temperatures up to 180 K. PbTe p-n diodes were fabricated by means of indium donor diffusion into PbTe single crystals grown using the Czochralski technique. The dark saturation current density was ~10􀀀 5 A/cm2 at T = 100 K, whereas at T = 180 K it reached ~10􀀀 1 A/ cm2. The photovoltage signals induced by a pulsed CO2 laser light across PbTe p-n junction were investigated over the 100–180 K temperature range. The two-photon absorption-caused photovoltaic effect is observed for the first time in In doped PbTe p-n junction for 9.5 μm wavelength at T = 100 K.