Dispersion dependencies of circular hollow-pipe SiC waveguide on the inner radius and temperature

Abstract

The dispersion dependencies of circular hollow-pipe silicon carbide (SiC) waveguide on the inner radius of the circular opening and the temperature are presented here. The electrodynamical problem was solved by the partial area method. All calculations of present work were fulfilled by our MATLAB code Here were investigated SiC waveguides with r = 0.5 mm, 1 mm, 1.5 mm, 2 mm, 2.5 mm at temperatures r=20°C, 500 "C, 1000 °C. The external radius of analyzed waveguides is equal to 2.5 mm. The comparison of phase and attenuation constants for the whole rod SiC waveguide and the hollow - pipe SiC waveguide with two different inner radii r of openings is presented here. The broadbandwidth of hollow - pipe SiC waveguide is higher comparing with the whole rod SiC waveguide. The broadbandwidth of the analyzed hollow - pipe SiC waveguide considerably grows with increasing of the inner waveguide radius r. The phase and attenuation constants have higher values when the temperature is higher at the most frequencies intervals.