Investigation of parameters of band-pass filters on conductivity of p-Si and p-Ge semiconductors

Rusen, Vaiva; Katkevičius, Andrius; Tolvaišienė, Sonata; Plonis, Darius

doi:10.12693/APhysPolA.140.122

Use this URL to cite this publication: https://hdl.handle.net/20.500.14911/111841

Investigation of parameters of band-pass filters on conductivity of p-Si and p-Ge semiconductors

Details

Publication Type (CRIS)

Straipsnis Web of Science ir Scopus duomenų bazėje / Article in Web of Science and Scopus database (S1)

Publication Type (eLABa)

Straipsnis Web of Science DB / Web of Science DB article (S1)

VILNIUS TECH Research Priorities and Topics

Inovatyvios elektroninės sistemos / Innovative Electronic Systems (MC0505)

Lithuanian Intelligent Specialization

Transportas, logistika ir informacinės ir ryšių technologijos (IRT) / Transport, logistic and information and communication technologies (L106)

Author(s)

Author	Affiliation
Rusen, Vaiva	Elektroninių sistemų katedra / Department of Electronic Systems (0549)
Katkevičius, Andrius	Elektroninių sistemų katedra / Department of Electronic Systems (0549)
Tolvaišienė, Sonata	Elektros inžinerijos katedra / Department of Electrical Engineering (0558)
Plonis, Darius	Elektroninių sistemų katedra / Department of Electronic Systems (0549)

Title

Investigation of parameters of band-pass filters on conductivity of p-Si and p-Ge semiconductors

[en]

Vaiva Rusen, Andrius Katkevičius, Sonata Tolvaišienė, Darius Plonis

Is part of

Acta physica Polonica A

Published In

Year	Volume	Issue	Start Page	End Page
2021	140	2	122	130

Publisher

Warsaw : Polish Academy of Sciences

Publisher (trusted)

Polish Academy of Sciences

Referenced in Database(s)(DBs)

Science Citation Index Expanded (Web of Science)

SCOPUS

Extent

p. 122-130

URI

URI	Access Rights
https://hdl.handle.net/20.500.14911/111841
http://przyrbwn.icm.edu.pl/APP/PDF/140/app140z2p03.pdf	Viso teksto dokumentas (atviroji prieiga) / Full Text Document (Open Access)

DOI

10.12693/APhysPolA.140.122

Cited references

Science / Art Area

Technologijos mokslai / Technological sciences (T)

Field of Science / Art

Elektros ir elektronikos inžinerija / Electrical and electronic engineering (T001)

Keywords (en)

Abstract (en)

Wireless communication technologies, including 5G and others, require devices with a reconfigurable frequency range. Frequency selection is performed with the use of various band-pass filters. Structures of the microstrip band-pass filters are popular due to their small dimensions and a convenient procedure of manufacture. We have calculated design parameters of parallel-coupled half-wave band-pass filter by using transmission line theory. The obtained design parameters have been verified with Sonnetr and CST Microwave Studior software packages. We have chosen p-Si and p-Ge semiconductor substrates for the band-pass filter. The obtained 3.162–3.971 GHz passband is suitable for the 5G applications. The investigation has also showed that the electrical conductivity of the substrate has impact on the S-parameters of the band-pass filter. The passband of the band-pass filter becomes narrower with the increase of the electrical conductivity of the substrate.