In-plane shaped GaAs/AlGaAs modulation-doped structures: physics and applications for THz/subTHz Sensing

Ašmontas, Steponas; Juozapavičius, Aušrius; Seliuta, Dalius; Širmulis, Edmundas; Tamošiūnas, Vincas; Valušis, Gintaras

Use this URL to cite this publication: https://hdl.handle.net/20.500.14911/139389

In-plane shaped GaAs/AlGaAs modulation-doped structures: physics and applications for THz/subTHz Sensing

Details

Publication Type (CRIS)

Kitos knygos dalis / Part of other book (Y7)

Publication Type (eLABa)

Kitos knygos dalis / A part of other book (Y7)

Author(s)

Author	Affiliation
Ašmontas, Steponas	Puslaidininkių fizikos institutas
Juozapavičius, Aušrius	Puslaidininkių fizikos institutas
Seliuta, Dalius	Fizikos katedra / Department of Physics (1020)	Puslaidininkių fizikos institutas
Širmulis, Edmundas	Puslaidininkių fizikos institutas
Tamošiūnas, Vincas	Fizikos katedra / Department of Physics (1020)	Puslaidininkių fizikos institutas
Valušis, Gintaras	Fizikos katedra / Department of Physics (1020)	Puslaidininkių fizikos institutas

Title

In-plane shaped GaAs/AlGaAs modulation-doped structures: physics and applications for THz/subTHz Sensing

[en]

Steponas Ašmontas ... [et al.]

Is part of

Trends in Semiconductor Research

Published In

Year	Start Page	End Page
2005	59	80

Publisher

New York : Nova Science Publishers, 2005

Extent

p. 59-80

URI

URI
https://hdl.handle.net/20.500.14911/139389

Cited references

Science / Art Area

Gamtos mokslai / Natural Sciences (N)

Field of Science / Art

Fizika / Physics (N002)

Keywords (lt)

Keywords (en)

Abstract (en)

up to 2.5 THz at room temperature. We consider design's effect on the increase of the sensitivity, and discuss noise properties of the diodes. Applying finite-difference-time modeling within the THz range and a phenomenological approach we elucidate the operation principles of the device. Finally, we compare the features of the 2DEG-bow-tie diodes with other relevant devices and discuss their possible commercial applications.