Measurement of charge density and mobility in semiconductors in the strong magnetic field

Barauskas, Saulius; Jankauskas, Zigmantas; Kvedaras, Vygaudas; Souslov, A.

Use this URL to cite this publication: https://hdl.handle.net/20.500.14911/144241

Measurement of charge density and mobility in semiconductors in the strong magnetic field

Details

Publication Type (CRIS)

Straipsnis Scopus duomenų bazėje / Article in Scopus database (S1b)

Publication Type (eLABa)

Straipsnis Scopus DB / Scopus DB article (S2)

Author(s)

Author	Affiliation
Barauskas, Saulius	Elektrotechnikos laboratorija / Laboratory of Electrical Engineering (055802)
Jankauskas, Zigmantas	Elektros inžinerijos katedra / Department of Electrical Engineering (0558)
Kvedaras, Vygaudas	Elektros inžinerijos katedra / Department of Electrical Engineering (0558)
Souslov, A.	National High Magnetic Field Laboratory

Title

Measurement of charge density and mobility in semiconductors in the strong magnetic field

[en]

S. Barauskas, Z. Jankauskas, V. Kvedaras, A. Souslov

Is part of

Measurement science review : journal of the institute of measurement science Slovak academy of sciences. Section 3, Measurement of physical quantities

Published In

Year	Volume	Start Page	End Page
2007	7	19	23

Publisher

Bratislava : Institute of Measurement Science

Publisher (trusted)

Institute of Measurement Science

Referenced in Database(s)(DBs)

SCOPUS

Index Copernicus

Extent

p. 19-23

URI

URI	Access Rights
https://hdl.handle.net/20.500.14911/144241
Straipsnis	Viso teksto dokumentas (atviroji prieiga) / Full Text Document (Open Access)

Cited references

Science / Art Area

Technologijos mokslai / Technological sciences (T)

Field of Science / Art

Elektros ir elektronikos inžinerija / Electrical and electronic engineering (T001)

Keywords (en)

Abstract (en)

In the semiconductors when the strong constant magnetic field H is applied the nondissipative Hall currents appear and helicon magnetoplasmic waves may be excited. The semiconductor sample becomes partially transparent under these conditions. In the case of resonance the transparency coefficient has maximum or minimum depending of resonance number. For fixed values of H and excitation frequency ω the charge density and mobility may be found. Measurements were conducted in the range of radio frequencies 10-2000 MHz, and magnetic fields 0-32 Tesla for n-InSb and n-Ge.